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It is a challenging task to fabricate thermally stable Photodetectors (PDs) working in visible light spectrum range due to the degradation in photoresponse characteristics. Herein, excellent performance parameters with photoresponsivity reached up to as high as 50 AW -1 , and ultrahigh specific detectivity in excess of 2.3×10 12 Jones have been obtained simultaneously in a single photodetector based on vertical MoS 2 (v-MoS 2 ) at a high temperature of 200°C. The TiO 2 interlay layer is ascribed as the main factor to enhance the PDs performances by reducing lattice mismatch between v-MoS 2 and substrate, separating photogenerated electron-hole pairs (EHPs), and the formation of the vertical MoS 2 nanostructures. Besides, the optoelectronics performances of the v-MoS 2 /TiO 2 heterostructures based field-effect transistor (FET) have also been examined under various operating temperatures, and the mechanism on how gate voltages affect the PDs performances has also been studied. In a word, the present fabricated v-MoS 2 /TiO 2 heterostructures based FET PDs will find practical applications in high-temperature environment.